Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range
dc.contributor.author
Alaydin, Özgür
dc.contributor.author
Gaulke, Marco
dc.contributor.author
Heidrich, Jonas
dc.contributor.author
Golling, Matthias
dc.contributor.author
Barh, Ajanta
dc.contributor.author
Keller, Ursula
dc.date.accessioned
2023-06-13T13:19:32Z
dc.date.available
2022-09-07T14:42:37Z
dc.date.available
2022-09-08T06:27:26Z
dc.date.available
2022-09-08T06:32:54Z
dc.date.available
2022-09-08T06:34:48Z
dc.date.available
2023-06-13T13:19:32Z
dc.date.issued
2022-09-08
dc.identifier.uri
http://hdl.handle.net/20.500.11850/569246
dc.identifier.doi
10.3929/ethz-b-000569246
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en
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dc.publisher
ETH Zurich
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http://rightsstatements.org/page/InC-NC/1.0/
dc.title
Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range
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Dataset
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In Copyright - Non-Commercial Use Permitted
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8.73 MB
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Mid-infrared optical dual-comb generation and spectroscopy with one unstabilized semiconductor laser
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Zurich
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ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
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ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
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10 years
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2032-09-08T06:27:33Z
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787097
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EC
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10.13039/501100000780
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H2020
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handle/20.500.11850/557161
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