High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization
dc.contributor.author
Gaulke, Marco
dc.contributor.author
Heidrich, Jonas
dc.contributor.author
Alaydin, Özgür
dc.contributor.author
Golling, Matthias
dc.contributor.author
Barh, Ajanta
dc.contributor.author
Keller, Ursula
dc.date.accessioned
2023-06-13T13:29:51Z
dc.date.available
2021-11-30T16:29:03Z
dc.date.available
2021-12-02T16:44:52Z
dc.date.available
2023-06-13T13:29:51Z
dc.date.issued
2021-12-02
dc.identifier.uri
http://hdl.handle.net/20.500.11850/517866
dc.identifier.doi
10.3929/ethz-b-000517866
dc.format
text/plain
en_US
dc.publisher
ETH Zurich
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.title
High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization
en_US
dc.type
Dataset
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
7.44 MB
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ethz.publication.place
Zurich
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ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03371 - Keller, Ursula / Keller, Ursula
en_US
ethz.date.retentionend
10 years
en_US
ethz.date.retentionendDate
2031-12-02T16:44:59Z
ethz.relation.isSupplementTo
https://www.research-collection.ethz.ch/handle/20.500.11850/517238
ethz.date.deposited
2021-11-30T16:29:09Z
ethz.source
FORM
ethz.eth
yes
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ethz.availability
Open access
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ethz.rosetta.installDate
2021-12-02T16:45:05Z
ethz.rosetta.lastUpdated
2023-10-12T16:32:26Z
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true
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