Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz
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publishedExterne Links
Zeitschrift / Serie
IEEE Transactions on Electron DevicesBand
Seiten / Artikelnummer
Verlag
IEEEThema
Gallium arsenide antimonide; heterojunction bipolar transistors; indium phosphide; millimeter-wave (mm-wave) integrated circuits; submillimeter-wave (sub-mm-wave) integrated circuits