Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz
dc.contributor.author
Weimann, Nils G.
dc.contributor.author
Johansen, Tom K.
dc.contributor.author
Stoppel, Dimitri
dc.contributor.author
Matalla, Matthias
dc.contributor.author
Brahem, Mohamed
dc.contributor.author
Nosaeva, Ksenia
dc.contributor.author
Boppel, Sebastian
dc.contributor.author
Volkmer, Nicole
dc.contributor.author
Ostermay, Ina
dc.contributor.author
Krozer, Viktor
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2018-08-21T14:38:45Z
dc.date.available
2018-07-28T06:46:17Z
dc.date.available
2018-07-30T11:39:12Z
dc.date.available
2018-08-21T14:38:45Z
dc.date.issued
2018
dc.identifier.issn
0018-9383
dc.identifier.issn
1557-9646
dc.identifier.other
10.1109/TED.2018.2854546
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/279117
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Gallium arsenide antimonide
en_US
dc.subject
heterojunction bipolar transistors
en_US
dc.subject
indium phosphide
en_US
dc.subject
millimeter-wave (mm-wave) integrated circuits
en_US
dc.subject
submillimeter-wave (sub-mm-wave) integrated circuits
en_US
dc.title
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ~ 0.53 THz
en_US
dc.type
Journal Article
dc.date.published
2018-07-19
ethz.journal.title
IEEE Transactions on Electron Devices
ethz.journal.volume
65
en_US
ethz.journal.issue
9
en_US
ethz.journal.abbreviated
IEEE Trans. Electron Devices
ethz.pages.start
3704
en_US
ethz.pages.end
3710
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2018-07-28T06:46:29Z
ethz.source
SCOPUS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-08-21T14:38:47Z
ethz.rosetta.lastUpdated
2023-02-06T15:47:19Z
ethz.rosetta.versionExported
true
ethz.COinS
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