Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure
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Autor(in)
Alle anzeigen
Datum
2009Typ
- Journal Article
ETH Bibliographie
yes
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Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
Journal of Crystal GrowthBand
Seiten / Artikelnummer
Verlag
ElsevierThema
A1. Phase diagram; B1. AlGaN; B1. Growth from solutions; B1. Hiph-pressure crystal growth; B1. Single-crystal growth; B2. Semiconducting III–V materialsOrganisationseinheit
03569 - Batlogg, Bertram (emeritus)
03512 - Günther, Detlef / Günther, Detlef
Anmerkungen
Received 5 May 2009, Revised 9 June 2009, Accepted 11 June 2009, Available online 27 June 2009.ETH Bibliographie
yes
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