Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure
dc.contributor.author
Belousov, A.
dc.contributor.author
Katrych, S.
dc.contributor.author
Jun, J.
dc.contributor.author
Zhang, J.
dc.contributor.author
Günther, Detlef
dc.contributor.author
Sobolewski, Roman
dc.contributor.author
Karpinskia, J.
dc.contributor.author
Batlogg, Bertram
dc.date.accessioned
2017-06-08T22:45:56Z
dc.date.available
2017-06-08T22:45:56Z
dc.date.issued
2009
dc.identifier.issn
0022-0248
dc.identifier.issn
1873-5002
dc.identifier.other
10.1016/j.jcrysgro.2009.06.047
dc.identifier.uri
http://hdl.handle.net/20.500.11850/17814
dc.language.iso
en
dc.publisher
Elsevier
dc.subject
A1. Phase diagram
dc.subject
B1. AlGaN
dc.subject
B1. Growth from solutions
dc.subject
B1. Hiph-pressure crystal growth
dc.subject
B1. Single-crystal growth
dc.subject
B2. Semiconducting III–V materials
dc.title
Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure
dc.type
Journal Article
ethz.journal.title
Journal of Crystal Growth
ethz.journal.volume
311
ethz.journal.issue
16
ethz.journal.abbreviated
J Cryst Growth
ethz.pages.start
3971
ethz.pages.end
3974
ethz.notes
Received 5 May 2009, Revised 9 June 2009, Accepted 11 June 2009, Available online 27 June 2009.
ethz.identifier.wos
ethz.identifier.nebis
000049301
ethz.publication.place
Amsterdam
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02020 - Dep. Chemie und Angewandte Biowiss. / Dep. of Chemistry and Applied Biosc.::02513 - Laboratorium für Anorganische Chemie / Laboratory of Inorganic Chemistry::03512 - Günther, Detlef / Günther, Detlef
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich, direkt::00012 - Lehre und Forschung, direkt::00007 - Departemente, direkt::02010 - Departement Physik / Department of Physics::02505 - Laboratorium für Festkörperphysik (LFP) / Laboratory for Solid State Physics (LFP)::03569 - Batlogg, Bertram (emeritus)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02020 - Dep. Chemie und Angewandte Biowiss. / Dep. of Chemistry and Applied Biosc.::02513 - Laboratorium für Anorganische Chemie / Laboratory of Inorganic Chemistry::03512 - Günther, Detlef / Günther, Detlef
ethz.date.deposited
2017-06-08T22:46:17Z
ethz.source
ECIT
ethz.identifier.importid
imp59364c827fea392011
ethz.ecitpid
pub:29887
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T20:24:09Z
ethz.rosetta.lastUpdated
2021-02-14T06:00:14Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Bulk%20single-crystal%20growth%20of%20ternary%20AlxGa1%E2%88%92xN%20from%20solution%20in%20gallium%20under%20high%20pressure&rft.jtitle=Journal%20of%20Crystal%20Growth&rft.date=2009&rft.volume=311&rft.issue=16&rft.spage=3971&rft.epage=3974&rft.issn=0022-0248&1873-5002&rft.au=Belousov,%20A.&Katrych,%20S.&Jun,%20J.&Zhang,%20J.&G%C3%BCnther,%20Detlef&rft.genre=article&rft_id=info:doi/10.1016/j.jcrysgro.2009.06.047&
Files in this item
| Files | Size | Format | Open in viewer |
|---|---|---|---|
|
There are no files associated with this item. |
|||
Publication type
-
Journal Article [130999]