Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
dc.contributor.author
Persichetti, Luca
dc.contributor.author
Sgarlata, Anna
dc.contributor.author
Mori, Stefano
dc.contributor.author
Notarianni, Marco
dc.contributor.author
Cherubini, Valeria
dc.contributor.author
Fanfoni, Massimo
dc.contributor.author
Motta, Nunzio
dc.contributor.author
Balzarotti, Adalberto
dc.date.accessioned
2019-04-05T06:14:25Z
dc.date.available
2017-06-11T10:46:52Z
dc.date.available
2019-04-05T06:14:25Z
dc.date.issued
2014
dc.identifier.issn
1931-7573
dc.identifier.issn
1556-276X
dc.identifier.other
10.1186/1556-276X-9-358
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/86516
dc.identifier.doi
10.3929/ethz-b-000086516
dc.description.abstract
We outline a metal-free fabrication route of in-plane Ge nanowires on Ge(001) substrates. By positively exploiting the polishing-induced defects of standard-quality commercial Ge(001) wafers, micrometer-length wires are grown by physical vapor deposition in ultra-high-vacuum environment. The shape of the wires can be tailored by the epitaxial strain induced by subsequent Si deposition, determining a progressive transformation of the wires in SiGe faceted quantum dots. This shape transition is described by finite element simulations of continuous elasticity and gives hints on the equilibrium shape of nanocrystals in the presence of tensile epitaxial strain.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Springer
en_US
dc.rights.uri
http://creativecommons.org/licenses/by/4.0/
dc.subject
Nanowires
en_US
dc.subject
Epitaxy
en_US
dc.subject
Silicon
en_US
dc.subject
Germanium
en_US
dc.subject
Quantum dots
en_US
dc.title
Beneficial defects: Exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
en_US
dc.type
Journal Article
dc.rights.license
Creative Commons Attribution 4.0 International
dc.date.published
2014-07-16
ethz.journal.title
Nanoscale Research Letters
ethz.journal.volume
9
en_US
ethz.journal.abbreviated
Nanoscale res. lett. (Print)
ethz.pages.start
358
en_US
ethz.size
9 p.
en_US
ethz.version.deposit
publishedVersion
en_US
ethz.identifier.wos
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::03986 - Gambardella, Pietro / Gambardella, Pietro
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02160 - Dep. Materialwissenschaft / Dep. of Materials::03986 - Gambardella, Pietro / Gambardella, Pietro
ethz.date.deposited
2017-06-11T10:48:38Z
ethz.source
ECIT
ethz.identifier.importid
imp593652160819d43531
ethz.ecitpid
pub:136158
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2017-07-15T04:32:47Z
ethz.rosetta.lastUpdated
2020-02-15T18:18:22Z
ethz.rosetta.versionExported
true
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