Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP
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Date
2007Type
- Journal Article
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yes
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Publication status
publishedExternal links
Journal / series
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and PhenomenaVolume
Pages / Article No.
Publisher
American Institute of PhysicsSubject
indium compounds; gallium arsenide; gallium compounds; III-V semiconductors; photonic crystals; sputter etching; optical fabrication; surface roughness; passivation; integrated optics; optical communication equipmentOrganisational unit
03386 - Jäckel, Heinz
Notes
Received 5 October 2006, Accepted 30 January 2007, Published 6 March 2007.More
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