Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain
dc.contributor.author
Münzenrieder, Niko
dc.contributor.author
Zysset, Christoph
dc.contributor.author
Petti, Luisa
dc.contributor.author
Kinkeldei, Thomas
dc.contributor.author
Salvatore, Giovanni Antonio
dc.contributor.author
Tröster, Gerhard
dc.date.accessioned
2017-06-10T20:49:42Z
dc.date.available
2017-06-10T20:49:42Z
dc.date.issued
2013
dc.identifier.issn
0038-1101
dc.identifier.other
10.1016/j.sse.2013.04.030
dc.identifier.uri
http://hdl.handle.net/20.500.11850/71158
dc.language.iso
en
dc.publisher
Elsevier
dc.subject
Flexible electronics
dc.subject
NiO
dc.subject
IGZO
dc.subject
pn-Diode
dc.subject
Oxide semiconductor
dc.title
Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain
dc.type
Journal Article
ethz.journal.title
Solid-State Electronics
ethz.journal.volume
87
ethz.journal.abbreviated
Solid-State Electron.
ethz.pages.start
17
ethz.pages.end
20
ethz.identifier.wos
ethz.identifier.nebis
000055320
ethz.publication.place
Kidlington
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02634 - Institut für Elektronik / Institute for Electronics::03388 - Tröster, Gerhard (emeritus)
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02634 - Institut für Elektronik / Institute for Electronics::03388 - Tröster, Gerhard (emeritus)
ethz.date.deposited
2017-06-10T20:52:34Z
ethz.source
ECIT
ethz.identifier.importid
imp593650f0be22244235
ethz.ecitpid
pub:112779
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-12T18:15:50Z
ethz.rosetta.lastUpdated
2024-02-01T20:49:19Z
ethz.rosetta.versionExported
true
ethz.COinS
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Journal Article [130998]