Recombination Dynamics in Quantum Dot Semiconductor Saturable Absorber Mirrors (QD-SESAMs)
dc.contributor.author
Maas, Deran
dc.contributor.author
Bellancourt, Aude-Reine
dc.contributor.author
Hoffmann, Martin
dc.contributor.author
Rudin, Benjamin
dc.contributor.author
Golling, Matthias
dc.contributor.author
Südmeyer, Thomas
dc.contributor.author
Keller, Uwe
dc.date.accessioned
2020-09-24T06:58:22Z
dc.date.available
2017-06-10T19:28:01Z
dc.date.available
2020-09-24T06:58:22Z
dc.date.issued
2008
dc.identifier.isbn
978-1-55752-859-9
en_US
dc.identifier.other
10.1109/CLEO.2008.4551066
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/69739
dc.description.abstract
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
Recombination Dynamics in Quantum Dot Semiconductor Saturable Absorber Mirrors (QD-SESAMs)
en_US
dc.type
Other Conference Item
dc.date.published
2008-07-22
ethz.book.title
2008 Conference on Lasers and Electro-Optics & Quantum Electronics and Laser Science Conference
en_US
ethz.journal.volume
1
en_US
ethz.pages.start
262
en_US
ethz.pages.end
263
en_US
ethz.event
2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics (CLEO/QELS 2008)
en_US
ethz.event.location
San Jose, CA, USA
en_US
ethz.event.date
May 4-9, 2008
en_US
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.date.deposited
2017-06-10T19:28:47Z
ethz.source
ECIT
ethz.identifier.importid
imp593650d295f0033442
ethz.ecitpid
pub:110441
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2017-07-12T17:40:43Z
ethz.rosetta.lastUpdated
2021-02-15T17:29:20Z
ethz.rosetta.versionExported
true
ethz.COinS
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