InP/GaAsSb DHBT Evolution in the THz Era
dc.contributor.author
Bolognesi, Colombo R.
dc.contributor.author
Flückiger, Ralf
dc.contributor.author
Alexandrova, Maria
dc.contributor.author
Lövblom, Rickard
dc.contributor.author
Ostinelli, Olivier
dc.date.accessioned
2023-10-17T07:56:01Z
dc.date.available
2023-10-17T07:49:59Z
dc.date.available
2023-10-17T07:56:01Z
dc.date.issued
2016
dc.identifier.isbn
978-1-5090-1964-9
en_US
dc.identifier.isbn
978-1-5090-1965-6
en_US
dc.identifier.other
10.1109/ICIPRM.2016.7528854
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/636963
dc.description.abstract
Summary form only given. The InP-GaAsSb material system is an alternative to InP-GaInAs for the realization of high-speed double heterostructure bipolar transistors (DHBTs) on InP substrates. This paper will review the evolution of InP/GaAsSb DHBTs over the last two decades, and will identify remaining challenges and opportunities. The characteristics of InP/GaAsSb DHBTs will be differentiated from those of the InP/GaInAs variant to clarify the technological trade-offs facing users. The state-of-the-art with both GaAsSb and GaInAsSb bases will be examined and prospects for THz devices given considering maximum oscillation frequencies exceeding 1.1 THz have already been obtained in our laboratory. Difficulties in RF performance assessment will be discussed and the approaches taken at ETH-Zurich discussed.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
InP/GaAsSb DHBT Evolution in the THz Era
en_US
dc.type
Other Conference Item
dc.date.published
2016-08-04
ethz.book.title
2016 Compound Semiconductor Week (CSW)
en_US
ethz.pages.start
WeD1-1
en_US
ethz.size
1 p.
en_US
ethz.event
Compound Semiconductor Week (CSW 2016)
en_US
ethz.event.location
Toyama, Japan
en_US
ethz.event.date
June 26-30, 2016
en_US
ethz.identifier.wos
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-12T19:20:07Z
ethz.source
ECIT
ethz.identifier.importid
imp5936556cd594183607
ethz.identifier.importid
imp593655313987d93022
ethz.ecitpid
pub:193689
ethz.ecitpid
pub:190386
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2023-10-17T07:50:01Z
ethz.rosetta.lastUpdated
2024-02-03T05:18:32Z
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/164704
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/127532
ethz.COinS
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