150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon
dc.contributor.author
Marti, D.
dc.contributor.author
Tirelli, S.
dc.contributor.author
Alt, A.R.
dc.contributor.author
Roberts, J.
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-10T08:13:15Z
dc.date.available
2017-06-10T08:13:15Z
dc.date.issued
2012-10
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2012.2204855
dc.identifier.uri
http://hdl.handle.net/20.500.11850/54708
dc.language.iso
en
dc.publisher
IEEE
dc.title
150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
33
ethz.journal.issue
10
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
1372
ethz.pages.end
1374
ethz.notes
Published online 21 September 2012.
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-10T08:16:33Z
ethz.source
ECIT
ethz.identifier.importid
imp59364faeb04f733098
ethz.ecitpid
pub:88269
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-13T05:42:17Z
ethz.rosetta.lastUpdated
2024-02-01T19:12:39Z
ethz.rosetta.versionExported
true
ethz.COinS
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