InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process
dc.contributor.author
Flückiger, Ralf
dc.contributor.author
Lövblom, Rickard
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Benedickter, Hansruedi
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-10T05:18:13Z
dc.date.available
2017-06-10T05:18:13Z
dc.date.issued
2012-08
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2012.2201443
dc.identifier.uri
http://hdl.handle.net/20.500.11850/53199
dc.language.iso
en
dc.publisher
IEEE
dc.title
InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
33
ethz.journal.issue
8
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
1135
ethz.pages.end
1137
ethz.notes
Manuscript received 3 May 2012, Revised 18 May 2012, Accepted 19 May 2012, Date of publication 5 July 2012.
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-10T05:18:42Z
ethz.source
ECIT
ethz.identifier.importid
imp59364f8e008b539157
ethz.ecitpid
pub:86204
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-18T10:34:06Z
ethz.rosetta.lastUpdated
2021-02-14T09:09:24Z
ethz.rosetta.versionExported
true
ethz.COinS
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