Abstract
Efforts for the integration of ferroelectric materials in nonvolatile, low energy consuming memories have so far been focused on perovskite oxide materials. Their down-scaling for nanodevices is, however, hindered by finite-size effects, and alternative materials offering more robust polar properties are required. Layered ferroelectrics of the Aurivillius phase have since emerged as promising candidates with robust polarization at subunit-cell thicknesses. Their controlled growth in the epitaxial thin film form has unfortunately remained elusive. Here, we demonstrate the stabilization of the coalescent layer-by-layer growth mode of the Bin+1Fen−3Ti3O3n+3 (BFTO) Aurivillius family homologues. We define the growth conditions for high-quality, single-crystalline thin films exhibiting ferroelectricity from the first half-unit-cell. We demonstrate the process to be effective for several homologous Aurivillius compositions, which highlights its general applicability. Our work thus provides the systematic framework for the integration of high-quality epitaxial layered ferroelectrics into oxide electronics. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000516396Publication status
publishedExternal links
Journal / series
Chemistry of MaterialsVolume
Pages / Article No.
Publisher
American Chemical SocietyOrganisational unit
03918 - Fiebig, Manfred / Fiebig, Manfred
Funding
188414 - Multifunctional oxide electronics using natural ferroelectric superlattices (SNF)
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