Abstract
InP–based HEMTs with an offset gate enable higher maximum oscillation frequency (fMAX) values because of the resulting reduction in gate–to–source resistance. Following this approach, we show improved DC characteristics and cutoff frequencies (fT/fMAX > 410/710 GHz with LG = 50 nm) with respect to centered gate devices. However, HEMTs with an offset gate show degraded noise performances compared to centered gate devices because of a higher gate leakage current. Our results show that offsetting the gate closer to the source is not desirable for ultra–low noise performance. Mehr anzeigen
Persistenter Link
https://doi.org/10.3929/ethz-b-000440169Publikationsstatus
publishedExterne Links
Zeitschrift / Serie
Physica Status Solidi ABand
Seiten / Artikelnummer
Verlag
WileyThema
direct current; gate-to-source spacing; indium phosphide high electron mobility transistors; noise characterization; radio frequencyOrganisationseinheit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
Förderung
169738 - Surfactant-Assisted Growth of Pseudomorphic InAs Channels for Ultralow Low-Noise Cryogenic Electronics (SNF)