Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions
dc.contributor.author
Tsibizov, Alexander
dc.contributor.author
Kovacevic-Badstuebner, Ivana
dc.contributor.author
Kakarla, Bhagyalakshmi
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2021-05-03T11:40:44Z
dc.date.available
2020-04-04T12:26:08Z
dc.date.available
2020-04-06T10:58:12Z
dc.date.available
2021-05-03T06:35:06Z
dc.date.available
2021-05-03T11:40:44Z
dc.date.issued
2020-02
dc.identifier.issn
0885-8993
dc.identifier.issn
1941-0107
dc.identifier.other
10.1109/TPEL.2019.2917221
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/408287
dc.identifier.doi
10.3929/ethz-b-000408287
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
Electrothermal (ET) modeling
en_US
dc.subject
Short circuit (SC)
en_US
dc.subject
Silicon carbide (SiC)
en_US
dc.subject
TCAD
en_US
dc.subject
Thermal conductivity
en_US
dc.title
Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions
en_US
dc.type
Journal Article
dc.rights.license
In Copyright - Non-Commercial Use Permitted
dc.date.published
2020-05-17
ethz.journal.title
IEEE Transactions on Power Electronics
ethz.journal.volume
35
en_US
ethz.journal.issue
2
en_US
ethz.journal.abbreviated
IEEE trans. power electron.
ethz.pages.start
1855
en_US
ethz.pages.end
1865
en_US
ethz.size
12 p. accepted version
en_US
ethz.version.deposit
acceptedVersion
en_US
ethz.identifier.wos
ethz.publication.place
New York, NY
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02130 - Dep. Maschinenbau und Verfahrenstechnik / Dep. of Mechanical and Process Eng.::02261 - Center for Sustainable Future Mobility / Center for Sustainable Future Mobility
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
ethz.date.deposited
2020-04-04T12:26:12Z
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2020-04-06T10:58:23Z
ethz.rosetta.lastUpdated
2024-02-02T13:37:03Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Accurate%20Temperature%20Estimation%20of%20SiC%20Power%20mosfets%20Under%20Extreme%20Operating%20Conditions&rft.jtitle=IEEE%20Transactions%20on%20Power%20Electronics&rft.date=2020-02&rft.volume=35&rft.issue=2&rft.spage=1855&rft.epage=1865&rft.issn=0885-8993&1941-0107&rft.au=Tsibizov,%20Alexander&Kovacevic-Badstuebner,%20Ivana&Kakarla,%20Bhagyalakshmi&Grossner,%20Ulrike&rft.genre=article&rft_id=info:doi/10.1109/TPEL.2019.2917221&
Files in this item
Publication type
-
Journal Article [130068]