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dc.contributor.author
Sun, Haifeng
dc.contributor.author
Alt, Andreas R.
dc.contributor.author
Tirelli, Stefano
dc.contributor.author
Marti, Diego
dc.contributor.author
Benedickter, Hansruedi
dc.contributor.author
Piner, Edwin
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2017-06-09T13:12:39Z
dc.date.available
2017-06-09T13:12:39Z
dc.date.issued
2011
dc.identifier.issn
0741-3106
dc.identifier.issn
1558-0563
dc.identifier.other
10.1109/LED.2011.2151172
dc.identifier.uri
http://hdl.handle.net/20.500.11850/38515
dc.language.iso
en
dc.publisher
IEEE
dc.subject
AlGaN/GaN
dc.subject
High-electron mobility transistor (HEMT)
dc.subject
Implant isolation
dc.subject
Millimeter-wave transistors
dc.title
Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation
dc.type
Journal Article
ethz.journal.title
IEEE Electron Device Letters
ethz.journal.volume
32
ethz.journal.issue
8
ethz.journal.abbreviated
IEEE Electron Device Lett.
ethz.pages.start
1056
ethz.pages.end
1058
ethz.notes
Published 7 June 2011, Date of current version 25 July 2011.
ethz.identifier.wos
ethz.identifier.nebis
000008013
ethz.publication.place
New York, NY
ethz.publication.status
published
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
ethz.date.deposited
2017-06-09T13:13:05Z
ethz.source
ECIT
ethz.identifier.importid
imp59364e4f86af585186
ethz.ecitpid
pub:62167
ethz.eth
yes
ethz.availability
Metadata only
ethz.rosetta.installDate
2017-07-19T12:51:45Z
ethz.rosetta.lastUpdated
2024-02-01T17:48:52Z
ethz.rosetta.versionExported
true
ethz.COinS
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