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Generalized Feller processes and Markovian lifts of stochastic Volterra processes: the affine case
(2020)Journal of Evolution EquationsWe consider stochastic (partial) differential equations appearing as Markovian lifts of affine Volterra processes with jumps from the point of view of the generalized Feller property which was introduced in, e.g., Dörsek and Teichmann (A semigroup point of view on splitting schemes for stochastic (partial) differential equations, 2010. arXiv:1011.2651). In particular, we provide new existence, uniqueness and approximation results for ...Journal Article -
Three-dimensional corrective osteotomies of complex malunited humeral fractures using patient-specific guides
(2016)Journal of Shoulder and Elbow SurgeryJournal Article -
"Buchenwaldkinder" - eine Schweizer Hilfsaktion
(2010)Veröffentlichungen des Archivs für Zeitgeschichte des Instituts für Geschichte der ETH ZürichMonograph -
A framework for efficient isogeometric computations of phase-field brittle fracture in multipatch shell structures
(2020)Computer Methods in Applied Mechanics and EngineeringWe present a computational framework for applying the phase-field approach to brittle fracture efficiently to complex shell structures. The momentum and phase-field equations are solved in a staggered scheme using isogeometric Kirchhoff–Love shell analysis for the structural part and isogeometric second- and fourth-order phase-field formulations for the brittle fracture part. For the application to complex multipatch structures, we propose ...Journal Article -
A single chip CMOS resonant beam gas sensor
(2001)Digest of Technical Papers / IEEE International Solid State Circuits Conference ~ 2001 IEEE International Solid-State Cicuits Conference (ISSCC)A micromachined resonant beam gas sensor for detection of organic volatiles is monolithically integrated with thermal actuators, piezoresistive read out, and circuitry for self-excitation and fabricated in standard CMOS technology. Mass load due to analyze absorption in a sensitive coating changes beam resonance frequency. The limit of detection is 1 ppm for toluene.Conference Paper -
Subnanometer Gold Clusters on Amino-Functionalized Silica: An Efficient Catalyst for the Synthesis of 1,3-Diynes by Oxidative Alkyne Coupling
(2017)ACS CatalysisJournal Article -
A 72mW 0.03mm2 Inductorless 40Gb/s CDR in 65nm SOI CMOS
(2007)Digest of Technical Papers / IEEE International Solid State Circuits Conference ~ 2007 IEEE International Solid-State Circuits Conference (ISSCC)A quarter-rate CDR circuit is based on a dual-loop approach where sampling phases are generated by a phase-programmable PLL that is controlled by a digital DLL. Implemented in 65nm SOI CMOS, the chip occupies 0.03mm 2 and consumes 1.8mW/Gb/s. Measurements confirm 40Gb/s operation with a BER <10 -12 at a maximum frequency-offset of 400ppm. The phase relation between data and edge samples can be programmed within plusmn0.1 UI.Other Conference Item -
Composition of arthropod species assemblages in Bt-expressing and near isogenic eggplants in experimental fields
(2007)Environmental EntomologyJournal Article -
Το παλιό σύστημα που δουλεύανε οι μαστόροι στα μέρη της Ανατολής: Η οικία Κόντογλου και η μεσοπολεμική φαντασίωση για ένα βυζαντινό Bauhaus
(2021)Bauhaus and GreeceBook Chapter -
A 16Gb/s Source-Series Terminated Transmitter in 65nm CMOS SOI
(2007)Digest of Technical Papers / IEEE International Solid State Circuits Conference ~ 2007 IEEE International Solid-State Circuits Conference (ISSCC)A half-rate source-series terminated TX, operating at data-rates up to 16Gb/s, targets chip-to-chip on-board interconnects. The TX features a 4-tap FFE, tunable termination, and clock-cleanup circuitry for low duty-cycle distortion, and is capable of driving loads referenced to a variable termination voltage, including Gnd, V DD , and V DD /2. Implemented in 65nm SOI, it occupies an area of 230 times 56mum 2 and draws 57.5mA from a 1V ...Other Conference Item