Flexible In-Ga-Zn-O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing
Publication status
publishedExternal links
Journal / series
IEEE Transactions on Electron DevicesVolume
Pages / Article No.
Publisher
IEEESubject
Flexible electronics; indium–gallium–zinc oxide (IGZO); mechanical strain; thin-film transistor (TFT); transit frequencyMore
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