Abstract
Summary form only given. We present coupled hybrid nanostructures using the combination of lithographically patterned graphene and a two-dimensional electron gas (2DEG) buried in a GaAs/AlGaAs heterostructure. The graphene forms Schottky barriers at the surface of the heterostructure and therefore allows for tuning the electronic density of the 2DEG. With graphene top gates, high quality nanostructures are defined in the GaAs 2DEG. Furthermore, the capacitive coupling between the layers is proven to be sufficient for charge detection schemes. Using a shallow 2DEG, interactions between the layers are enhanced, and thanks to graphene's ambipolarity, an electron-hole bilayer system can be formed. The strength of charge carrier interactions in such hybrid systems are studied in Coulomb drag measurements. Show more
Publication status
publishedExternal links
Book title
2016 Compound Semiconductor Week (CSW)Pages / Article No.
Publisher
IEEEEvent
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ETH Bibliography
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