Plasmonic BTO-on-SiN Modulators for High-Speed Optical Communication
Abstract
We present a high-speed modulator platform leveraging the high Pockels coefficient of BTO monolithically integrated on foundry-produced SiN. With this approach, we demonstrate data rates up to 256 GBd and line rates of 340 Gbit/s.
Permanent link
https://doi.org/10.3929/ethz-b-000694643Publication status
publishedPublisher
ETH Zurich, Institute of Electromagnetic Fields (IEF)Event
Organisational unit
02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory03974 - Leuthold, Juerg / Leuthold, Juerg
Notes
Poster session on September 11, 2024More
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