Metadata only
Date
2014-01-27Type
- Conference Paper
Abstract
In this work, we present GaInAs/AlAs/AlInAs quantum cascade lasers emitting from 3.2 to 3.4 μm. Single-mode emission is obtained using buried distributed-feedback gratings fabricated using standard deep-UV contact lithography. This technique can easily be transferred to industrial production. Devices with single-mode emission down to 3.19 μm were achieved with peak power of up to 250 mW at −20 °C. A tuning range of 11 cm−1 was obtained by changing the device temperature between −30 °C and 20 °C. © 2014 Optical Society of America Show more
Publication status
publishedExternal links
Journal / series
Optics ExpressVolume
Pages / Article No.
Publisher
OSA PublishingEvent
Organisational unit
03759 - Faist, Jérôme / Faist, Jérôme
Funding
317884 - Mid InfraRed Innovative lasers For Improved SENSor of hazardous substances (EC)
More
Show all metadata