Abstract
We use strain redistribution to locally enhance strain in GeSn layers. We demonstrate uniaxial tensile strain in microbridges with lasing cavities tuned over the 3.1 to 4.6 m range, and thresholds lower than 10 kW.cm-2 at 25K, in pulsed excitation mode. Laser operation vanishes around 273K.
Publication status
publishedExternal links
Book title
2019 IEEE 16th International Conference on Group IV Photonics (GFP)Pages / Article No.
Publisher
IEEEEvent
Subject
GeSn; Laser; Strain; TunabilityMore
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ETH Bibliography
yes
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