Strained germanium lasing in the Mid-Infrared
dc.contributor.author
Armand Pilon, Francesco T.
dc.contributor.author
Lyasota, Alexey
dc.contributor.author
Niquet, Yann M.
dc.contributor.author
Reboud, Vincent
dc.contributor.author
Calvo, Vincent
dc.contributor.author
Pauc, Nicolas
dc.contributor.author
Widiez, Julie
dc.contributor.author
Bonzon, Christopher
dc.contributor.author
Hartmann, Jean M.
dc.contributor.author
Chelnokov, Alexei
dc.contributor.author
Faist, Jérôme
dc.contributor.author
Sigg, Hans
dc.date.accessioned
2020-09-08T05:30:51Z
dc.date.available
2020-09-08T05:30:51Z
dc.date.issued
2019
dc.identifier.isbn
978-1-7281-0905-3
en_US
dc.identifier.isbn
978-1-7281-0906-0
en_US
dc.identifier.other
10.1109/GROUP4.2019.8925921
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/439016
dc.description.abstract
Mid-Infrared lasing between 3.20 and 3.66 mu m is achieved in undoped germanium microbridges strained up to 5.9 % and up to a temperature of 100 K under optical pulsed excitation of 100 ps, exploiting a non-equilibrium carrier dynamic.
en_US
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
Strained germanium lasing in the Mid-Infrared
en_US
dc.type
Conference Paper
dc.date.published
2019-12-09
ethz.book.title
2019 IEEE 16th International Conference on Group IV Photonics (GFP)
en_US
ethz.pages.start
8925921
en_US
ethz.size
2 p.
en_US
ethz.event
IEEE 16th International Conference on Group IV Photonics (GFP 2019)
en_US
ethz.event.location
Singapore
ethz.event.date
August 28-30, 2019
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02010 - Dep. Physik / Dep. of Physics::02510 - Institut für Quantenelektronik / Institute for Quantum Electronics::03759 - Faist, Jérôme / Faist, Jérôme
ethz.date.deposited
2019-10-25T04:57:04Z
ethz.source
SCOPUS
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2020-09-08T05:31:13Z
ethz.rosetta.lastUpdated
2024-02-02T11:59:43Z
ethz.rosetta.exportRequired
true
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/372748
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/432104
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