Scaling of InP/GaAsSb DHBTs: A Simultaneous fT/fMAX = 463/829 GHz in a 10 μm Long Emitter - Research Collection

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Autor(in)

Arabhavi, Akshay M.

Ostinelli, Olivier

Bolognesi, Colombo R.

Datum

2018

Typ

Conference Paper

Zitate

16 Zitate in Scopus

ETH Bibliographie

yes

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Publikationsstatus

published

Externe Links

https://doi.org/10.1109/BCICTS.2018.8551036

Buchtitel

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Seiten / Artikelnummer

132 - 135

Verlag

IEEE

Konferenz

BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2018), San Diego, CA, USA, October 14- 17, 2018

Thema

Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency (fMAX ); scaling; millimeter-wave transistors

Organisationseinheit

03721 - Bolognesi, Colombo / Bolognesi, Colombo
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience

Mehr

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Zitate

16 Zitate in Scopus

ETH Bibliographie

yes

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