Scaling of InP/GaAsSb DHBTs: A Simultaneous fT/fMAX = 463/829 GHz in a 10 μm Long Emitter - Research Collection

Metadata only

Author

Arabhavi, Akshay M.

Ostinelli, Olivier

Bolognesi, Colombo R.

Date

2018

Type

Conference Paper

Citations

Cited 16 times in Scopus

ETH Bibliography

yes

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Publication status

published

External links

https://doi.org/10.1109/BCICTS.2018.8551036

Book title

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Pages / Article No.

132 - 135

Publisher

IEEE

Event

BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS 2018), San Diego, CA, USA, October 14- 17, 2018

Subject

Double heterojunction bipolar transistors (DHBTs); InP/GaAsSb; maximum oscillation frequency (fMAX ); scaling; millimeter-wave transistors

Organisational unit

03721 - Bolognesi, Colombo / Bolognesi, Colombo
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience

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Show all metadata

Citations

Cited 16 times in Scopus

ETH Bibliography

yes

Altmetrics