Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory
dc.contributor.author
Jäger, Beat
dc.contributor.author
Ju, Yan Rui
dc.contributor.author
Stark, Roger
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2019-04-10T08:49:38Z
dc.date.available
2019-01-18T08:51:03Z
dc.date.available
2019-03-22T13:26:15Z
dc.date.available
2019-04-10T08:49:38Z
dc.date.issued
2018-06-05
dc.identifier.issn
0255-5476
dc.identifier.issn
1662-9752
dc.identifier.other
10.4028/www.scientific.net/msf.924.786
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/317145
dc.language.iso
en
en_US
dc.publisher
Trans Tech Publications
en_US
dc.title
Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory
en_US
dc.type
Conference Paper
dc.date.published
2018-06-05
ethz.book.title
Silicon Carbide and Related Materials 2017
en_US
ethz.journal.title
Materials Science Forum
ethz.journal.volume
924
en_US
ethz.pages.start
786
en_US
ethz.pages.end
789
en_US
ethz.event
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
en_US
ethz.event.location
Washington, DC, USA
en_US
ethz.event.date
September 17-22
en_US
ethz.publication.place
Pfäffikon
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.date.deposited
2019-01-18T08:51:09Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2019-03-22T13:26:26Z
ethz.rosetta.lastUpdated
2021-02-15T04:18:56Z
ethz.rosetta.versionExported
true
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Conference Paper [35344]