Exploring the behavior of parallel connected SiC power MOSFETs influenced by performance spread in circuit simulations
dc.contributor.author
Müting, Johanna
dc.contributor.author
Schneider, Nick
dc.contributor.author
Ziemann, Thomas
dc.contributor.author
Stark, Roger
dc.contributor.author
Grossner, Ulrike
dc.date.accessioned
2018-07-09T05:51:01Z
dc.date.available
2018-07-09T05:51:01Z
dc.date.issued
2018
dc.identifier.isbn
978-1-5386-1180-7
en_US
dc.identifier.isbn
978-1-5386-1179-1
en_US
dc.identifier.isbn
978-1-5386-1181-4
en_US
dc.identifier.other
10.1109/apec.2018.8341023
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/274447
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.subject
Silicon Carbide
en_US
dc.subject
Power MOSFET
en_US
dc.subject
Parallelization
en_US
dc.subject
Circuit Simulation
en_US
dc.subject
MOSFET compact models
en_US
dc.title
Exploring the behavior of parallel connected SiC power MOSFETs influenced by performance spread in circuit simulations
en_US
dc.type
Conference Paper
dc.date.published
2018-04-19
ethz.book.title
2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
en_US
ethz.pages.start
280
en_US
ethz.pages.end
286
en_US
ethz.event
33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
en_US
ethz.event.location
San Antonio, TX, USA
en_US
ethz.event.date
March 4-8, 2018
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.date.deposited
2018-05-03T08:40:12Z
ethz.source
FORM
ethz.source
WOS
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-07-09T05:51:04Z
ethz.rosetta.lastUpdated
2021-02-15T00:37:51Z
ethz.rosetta.versionExported
true
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/274292
dc.identifier.olduri
http://hdl.handle.net/20.500.11850/262012
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Exploring%20the%20behavior%20of%20parallel%20connected%20SiC%20power%20MOSFETs%20influenced%20by%20performance%20spread%20in%20circuit%20simulations&rft.date=2018&rft.spage=280&rft.epage=286&rft.au=M%C3%BCting,%20Johanna&Schneider,%20Nick&Ziemann,%20Thomas&Stark,%20Roger&Grossner,%20Ulrike&rft.isbn=978-1-5386-1180-7&978-1-5386-1179-1&978-1-5386-1181-4&rft.genre=proceeding&rft_id=info:doi/10.1109/apec.2018.8341023&rft.btitle=2018%20IEEE%20Applied%20Power%20Electronics%20Conference%20and%20Exposition%20(APEC)
Files in this item
Files | Size | Format | Open in viewer |
---|---|---|---|
There are no files associated with this item. |
Publication type
-
Conference Paper [35220]