Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors
dc.contributor.author
Daus, Alwin
dc.contributor.author
Han, Songyi
dc.contributor.author
Knobelspies, Stefan
dc.contributor.author
Cantarella, Giuseppe
dc.contributor.author
Vogt, Christian
dc.contributor.author
Münzenrieder, Niko
dc.contributor.author
Tröster, Gerhard
dc.date.accessioned
2018-02-14T15:59:34Z
dc.date.available
2018-02-07T09:21:19Z
dc.date.available
2018-02-14T15:58:53Z
dc.date.available
2018-02-14T15:59:34Z
dc.date.issued
2017
dc.identifier.isbn
978-1-5386-3559-9
en_US
dc.identifier.isbn
978-1-5386-3558-2
en_US
dc.identifier.isbn
978-1-5386-3560-5
en_US
dc.identifier.other
10.1109/iedm.2017.8268349
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/239077
dc.language.iso
en
en_US
dc.publisher
IEEE
en_US
dc.title
Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors
en_US
dc.type
Conference Paper
dc.date.published
2018-01-25
ethz.book.title
2017 IEEE International Electron Devices Meeting (IEDM)
en_US
ethz.pages.start
8.1.1
en_US
ethz.pages.end
8.1.4
en_US
ethz.event
IEEE International Electron Devices Meeting (IEDM 2017)
en_US
ethz.event.location
San Francisco, CA, USA
en_US
ethz.event.date
December 2-6, 2017
en_US
ethz.identifier.wos
ethz.identifier.scopus
ethz.publication.place
Piscataway, NJ
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::02634 - Institut für Elektronik / Institute for Electronics
en_US
ethz.date.deposited
2018-02-07T09:21:20Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2018-02-14T15:58:55Z
ethz.rosetta.lastUpdated
2021-02-14T22:21:32Z
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true
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Conference Paper [35391]