Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
dc.contributor.author
Woerle, Judith
dc.contributor.author
Camarda, Massimo
dc.contributor.author
Schneider, Christof W.
dc.contributor.author
Sigg, Hans
dc.contributor.author
Grossner, Ulrike
dc.contributor.author
Gobrecht, Jens
dc.contributor.editor
Zekentes, Konstantinos
dc.contributor.editor
Vasilevskiy, Konstantin V.
dc.contributor.editor
Frangis, Nikolaos
dc.date.accessioned
2021-04-08T14:45:57Z
dc.date.available
2018-01-04T10:51:15Z
dc.date.available
2018-01-04T11:26:54Z
dc.date.available
2018-01-04T17:30:22Z
dc.date.available
2021-04-08T10:24:30Z
dc.date.available
2021-04-08T14:45:57Z
dc.date.issued
2016-05-15
dc.identifier.issn
0255-5476
dc.identifier.issn
1662-9752
dc.identifier.other
10.4028/www.scientific.net/msf.897.119
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/225382
dc.identifier.doi
10.3929/ethz-b-000225382
dc.description.abstract
In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses between 2 nm and 32 nm. Capacitance-Voltage measurements revealed a decreasing density of interface defects for increasing oxide thickness suggesting a deterioration of the interface at the initial stage of the growth.
en_US
dc.format
application/pdf
en_US
dc.language.iso
en
en_US
dc.publisher
Trans Tech Publications
en_US
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
Silicon carbide
en_US
dc.subject
Thermal oxidation
en_US
dc.subject
Density of interface states
en_US
dc.subject
Conductance
en_US
dc.title
Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
en_US
dc.type
Conference Paper
dc.rights.license
In Copyright - Non-Commercial Use Permitted
dc.date.published
2017-05-15
ethz.book.title
Silicon Carbide and Related Materials 2016
en_US
ethz.journal.title
Materials Science Forum
ethz.journal.volume
897
en_US
ethz.pages.start
119
en_US
ethz.pages.end
122
en_US
ethz.version.deposit
acceptedVersion
en_US
ethz.event
11th European Conference on Silicon Carbide & Related Materials (ECSCRM 2016)
ethz.event.location
Halkidiki, Greece
ethz.event.date
September 25-29, 2016
ethz.publication.place
Zurich
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::09480 - Grossner, Ulrike / Grossner, Ulrike
ethz.date.deposited
2018-01-04T10:51:16Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Open access
en_US
ethz.rosetta.installDate
2018-01-04T11:26:56Z
ethz.rosetta.lastUpdated
2022-03-29T06:27:40Z
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true
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true
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