Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD

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Author
Müting, Johanna
Kakarla, Bhagyalakshmi
Grossner, Ulrikecc
Date
2017
Type
    Conference Paper
Publication status
published
External links
Editor
Zekentes, Konstantinos
Vasilevskiy, Konstantin V.
Frangis, Nikolaos
Book title
Silicon Carbide and Related Materials 2016
Journal / series
Materials Science Forum
Volume
897
Pages / Article No.
553 - 556
Publisher
Trans Tech Publications
Event
11th European Conference on Silicon Carbide & Related Materials (ECSCRM 2016), Halkidiki, Greece, September 25-29, 2016
Subject
TCAD Simulation; Device Modeling; Ionized Impurity Scattering; Surface Roughness
Organisational unit
09480 - Grossner, Ulrike / Grossner, Ulrike  
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