Defects in Silicon induced by high temperature treatment and their influence on MOS-devices
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Date
1994Type
- Doctoral Thesis
ETH Bibliography
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https://doi.org/10.3929/ethz-a-000961970Publication status
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ETH ZürichSubject
METAL OXIDE SEMICONDUCTOR-TRANSISTOREN, MOS (ELEKTRONIK); DEFEKTE UND FEHLORDNUNG (KRISTALLOGRAPHIE); VORGÄNGE BEI HOHEN TEMPERATUREN, ERZEUGUNG VON HOHEN TEMPERATUREN (WÄRMELEHRE); METAL OXIDE SEMICONDUCTOR TRANSISTORS, MOS (ELECTRONICS); DEFECTS AND IRREGULARITIES (CRYSTALLOGRAPHY); HIGH-TEMPERATURE PRODUCTION (THERMOPHYSICS)Notes
Rückentitel: Defects in silicon. Diss. Techn. Wiss. ETH Zürich, Nr. 10694, 1994. Ref.: H. Baltes ; Korref.: H. Von Känel.More
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