Integrated In₀.₅₃Ga₀.₄₇As/InP hall effect devices for highly sensitive megnetic field sensors
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Author
Date
1993Type
- Doctoral Thesis
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https://doi.org/10.3929/ethz-a-000934344Publication status
publishedExternal links
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ETH ZürichSubject
HALLEFFEKT (MAGNETISMUS); MESSUNG MAGNETISCHER GRÖSSEN (ELEKTRISCHE MESSTECHNIK); MOLEKULARE HALBLEITER (HALBLEITERTECHNOLOGIE); MESSTECHNISCHE SONDEN, SENSOREN, DETEKTOREN (PHYSIK); HALL EFFECT (MAGNETISM); MEASUREMENT 0F MAGNETIC QUANTITIES (ELECTRICAL MEASUREMENT TECHNIQUE); MOLECULAR SEMICONDUCTORS (SEMICONDUCTOR TECHNOLOGY); MEASURING DEVICES, SENSORS, DETECTORS (PHYSICS)Notes
Diss. Naturwiss. ETH Zürich, Nr. 10420, 1993. Ref.: H. Melchior ; Korref.: R. S. Popovic.More
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