Development and Optimization of High-Speed InP/GaAsSb Double Heterojunction Bipolar Transistors

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Author
Alexandrova, Maria
Date
2015
Type
    Doctoral Thesis
Rights / license
In Copyright - Non-Commercial Use Permitted
Permanent link
https://doi.org/10.3929/ethz-a-010603473
Publication status
published
External links
Search print copy at ETH Library
Contributors
Examiner: Bolognesi, Colombo R.
Examiner: Meneghesso, G.
Publisher
ETH Zurich
Subject
HETEROBIPOLARTRANSISTOREN, HBT (ELEKTRONIK); ERZEUGUNG DÜNNER SCHICHTEN (PHYSIK VON MOLEKULARSYSTEMEN); HETEROJUNCTION BIPOLAR TRANSISTORS, HBT (ELECTRONICS); GALLIUM ARSENIDE DEVICES (ELECTRONICS); HETEROJUNCTION + HETEROSTRUCTURE (CRYSTALLOGRAPHY); PRODUCTION OF THIN FILMS (PHYSICS OF MOLECULAR SYSTEMS); GALLIUMARSENID-BAUELEMENTE (ELEKTRONIK); HETEROKONTAKT + HETEROSTRUKTUR (KRISTALLOGRAPHIE)
Organisational unit
02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
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