Recombination Dynamics in Quantum Dot Semiconductor Saturable Absorber Mirrors (QD-SESAMs)
Abstract
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs.
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2008 Conference on Lasers and Electro-Optics & Quantum Electronics and Laser Science ConferenceVolume
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