Plasmonic BTO-on-SiN Modulators for High-Speed Optical Communication
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Autor(in)
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Datum
2024-09-18Typ
- Conference Poster
ETH Bibliographie
yes
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Abstract
We present a high-speed modulator platform leveraging the high Pockels coefficient of BTO monolithically integrated on foundry-produced SiN. With this approach, we demonstrate data rates up to 256 GBd and line rates of 340 Gbit/s.
Persistenter Link
https://doi.org/10.3929/ethz-b-000694643Publikationsstatus
publishedVerlag
ETH Zurich, Institute of Electromagnetic Fields (IEF)Konferenz
Organisationseinheit
02635 - Institut für Elektromagnetische Felder / Electromagnetic Fields Laboratory03974 - Leuthold, Juerg / Leuthold, Juerg
Anmerkungen
Poster session on September 11, 2024ETH Bibliographie
yes
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