Abstract
InP–based HEMTs with an offset gate enable higher maximum oscillation frequency (fMAX) values because of the resulting reduction in gate–to–source resistance. Following this approach, we show improved DC characteristics and cutoff frequencies (fT/fMAX > 410/710 GHz with LG = 50 nm) with respect to centered gate devices. However, HEMTs with an offset gate show degraded noise performances compared to centered gate devices because of a higher gate leakage current. Our results show that offsetting the gate closer to the source is not desirable for ultra–low noise performance. Show more
Permanent link
https://doi.org/10.3929/ethz-b-000440169Publication status
publishedExternal links
Journal / series
Physica Status Solidi AVolume
Pages / Article No.
Publisher
WileySubject
direct current; gate-to-source spacing; indium phosphide high electron mobility transistors; noise characterization; radio frequencyOrganisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo
02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
Funding
169738 - Surfactant-Assisted Growth of Pseudomorphic InAs Channels for Ultralow Low-Noise Cryogenic Electronics (SNF)
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