Zur Kurzanzeige

dc.contributor.author
Han, Daxin
dc.contributor.author
Calvo Ruiz, Diego
dc.contributor.author
Saranovac, Tamara
dc.contributor.author
Ostinelli, Olivier
dc.contributor.author
Bolognesi, Colombo R.
dc.date.accessioned
2020-07-16T06:33:42Z
dc.date.available
2020-05-27T09:35:36Z
dc.date.available
2020-07-16T06:33:42Z
dc.date.issued
2020-05
dc.identifier.isbn
978-1-893580-30-5
en_US
dc.identifier.uri
http://hdl.handle.net/20.500.11850/416895
dc.description.abstract
The use of highly-doped thick cap layers is a common strategy to enhance the performance of GaInAs/AlInAs/InP High Electron Mobility Transistors (HEMTs) by reducing the Ohmic contact resistance (RC). However, because of the high doping level, cap layers become very sensitive to processing steps performed before and during gate recess etching. In this paper, the sensitivity of gate recess etching on a 20 nm highly-doped GaInAs cap layer (doped 7.3 × 1019 cm-3) is studied with respect to Ohmic contact type (annealed/non-annealed), chip size, gate finger length, and etchant choice. The use of very high cap doping levels exacerbates device and process scaling challenges. For example, the recess finger length dependence complicates multi-project wafer runs which would simultaneously include narrow finger HEMTs used in digital ICs and longer finger HEMTs used in microwave analog circuits.
en_US
dc.language.iso
en
en_US
dc.publisher
CS MANTECH
en_US
dc.subject
High Electron Mobility Transistor (HEMT)
en_US
dc.subject
Gate recess
en_US
dc.subject
Gate leakage
en_US
dc.subject
High cap doping
en_US
dc.subject
Wet etching
en_US
dc.title
Gate Recess Etch Sensitivity of Thick and Highly-Doped GaInAs Cap Layer in InP HEMT Fabrication
en_US
dc.type
Conference Paper
ethz.book.title
CS MANTECH 2020 Digest of Papers
en_US
ethz.pages.start
145
en_US
ethz.pages.end
147
en_US
ethz.event
2020 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2020) (cancelled)
en_US
ethz.event.location
Tucson, AZ, USA
en_US
ethz.event.date
May 11-14, 2020
en_US
ethz.notes
Conference cancelled due to Corona virus (COVID-19)
en_US
ethz.publication.place
Beaverton, OR
en_US
ethz.publication.status
published
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00012 - Lehre und Forschung::00007 - Departemente::02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.::03721 - Bolognesi, Colombo / Bolognesi, Colombo
en_US
ethz.leitzahl.certified
ETH Zürich::00002 - ETH Zürich::00003 - Schulleitung und Dienste::00022 - Bereich VP Forschung / Domain VP Research::02205 - FIRST-Lab / FIRST Center for Micro- and Nanoscience
ethz.date.deposited
2020-05-27T09:35:45Z
ethz.source
FORM
ethz.eth
yes
en_US
ethz.availability
Metadata only
en_US
ethz.rosetta.installDate
2020-07-16T06:33:53Z
ethz.rosetta.lastUpdated
2024-02-02T11:26:33Z
ethz.rosetta.versionExported
true
ethz.COinS
ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.atitle=Gate%20Recess%20Etch%20Sensitivity%20of%20Thick%20and%20Highly-Doped%20GaInAs%20Cap%20Layer%20in%20InP%20HEMT%20Fabrication&rft.date=2020-05&rft.spage=145&rft.epage=147&rft.au=Han,%20Daxin&Calvo%20Ruiz,%20Diego&Saranovac,%20Tamara&Ostinelli,%20Olivier&Bolognesi,%20Colombo%20R.&rft.isbn=978-1-893580-30-5&rft.genre=proceeding&rft.btitle=CS%20MANTECH%202020%20Digest%20of%20Papers
 Printexemplar via ETH-Bibliothek suchen

Dateien zu diesem Eintrag

DateienGrößeFormatIm Viewer öffnen

Zu diesem Eintrag gibt es keine Dateien.

Publikationstyp

Zur Kurzanzeige