A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times

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Author
Wen, Xin
Mukherjee, Chhandak
Raya, Christian
Ardouin, Bertrand
Deng, Marina
Frégonèse, Sébastien
Nodjiadjim, Virginie
Riet, Muriel
Quan, Wei
Arabhavi, Akshay
Ostinelli, Olivier
Bolognesi, Colombo R.
Zimmer, Thomas
Maneux, Cristell
Luisier, Mathieu
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Date
2019-12
Type
    Journal Article
Publication status
published
External links
Journal / series
IEEE Transactions on Electron Devices
Volume
66(12)
Pages / Article No.
5084 - 5090
Publisher
IEEE
Subject
Compact model; Device simulation; Double heterojunction bipolar transistors (DHBTs); GaAsSb/InPDHBTs; HiCuM; InGaAs/InP DHBTs; Transit time
Organisational unit
03721 - Bolognesi, Colombo / Bolognesi, Colombo  
03925 - Luisier, Mathieu / Luisier, Mathieu  
Funding
169413 - ULTIMATE: Upper Limit Technology Investigations Mandatory to Attain Terahertz Electronics (SNF)
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Citations
Cited 12 times in Scopus
ETH Bibliography
yes
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