A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times

Wen, Xin; Mukherjee, Chhandak; Raya, Christian; Ardouin, Bertrand; Deng, Marina; Frégonèse, Sébastien; Nodjiadjim, Virginie; Riet, Muriel; Quan, Wei; Arabhavi, Akshay; Ostinelli, Olivier; Bolognesi, Colombo R.; Zimmer, Thomas; Maneux, Cristell; Luisier, Mathieu

doi:10.1109/ted.2019.2946514

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Autor(in)

Bolognesi, Colombo R.

Datum

2019-12

Typ

Journal Article

Zitate

12 Zitate in Scopus

ETH Bibliographie

yes

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Publikationsstatus

published

Externe Links

https://doi.org/10.1109/ted.2019.2946514

Zeitschrift / Serie

IEEE Transactions on Electron Devices

Band

66(12)

Seiten / Artikelnummer

5084 - 5090

Verlag

IEEE

Thema

Compact model; Device simulation; Double heterojunction bipolar transistors (DHBTs); GaAsSb/InPDHBTs; HiCuM; InGaAs/InP DHBTs; Transit time

Organisationseinheit

03721 - Bolognesi, Colombo / Bolognesi, Colombo
03925 - Luisier, Mathieu / Luisier, Mathieu

Förderung

169413 - ULTIMATE: Upper Limit Technology Investigations Mandatory to Attain Terahertz Electronics (SNF)

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Zitate

12 Zitate in Scopus

ETH Bibliographie

yes

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