Abstract
In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses between 2 nm and 32 nm. Capacitance-Voltage measurements revealed a decreasing density of interface defects for increasing oxide thickness suggesting a deterioration of the interface at the initial stage of the growth. Show more
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https://doi.org/10.3929/ethz-b-000225382Publication status
publishedExternal links
Book title
Silicon Carbide and Related Materials 2016Journal / series
Materials Science ForumVolume
Pages / Article No.
Publisher
Trans Tech PublicationsEvent
Subject
Silicon carbide; Thermal oxidation; Density of interface states; ConductanceOrganisational unit
02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.09480 - Grossner, Ulrike / Grossner, Ulrike
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