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Datum
2016-05-15Typ
- Conference Paper
ETH Bibliographie
yes
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Abstract
In this study, electrical properties of MOS capacitors with varying oxide thicknesses have been investigated. The oxide growth was performed at 1050 °C without any further post-oxidation annealing steps resulting in oxide thicknesses between 2 nm and 32 nm. Capacitance-Voltage measurements revealed a decreasing density of interface defects for increasing oxide thickness suggesting a deterioration of the interface at the initial stage of the growth. Mehr anzeigen
Persistenter Link
https://doi.org/10.3929/ethz-b-000225382Publikationsstatus
publishedExterne Links
Buchtitel
Silicon Carbide and Related Materials 2016Zeitschrift / Serie
Materials Science ForumBand
Seiten / Artikelnummer
Verlag
Trans Tech PublicationsKonferenz
Thema
Silicon carbide; Thermal oxidation; Density of interface states; ConductanceOrganisationseinheit
02140 - Dep. Inf.technologie und Elektrotechnik / Dep. of Inform.Technol. Electrical Eng.09480 - Grossner, Ulrike / Grossner, Ulrike
ETH Bibliographie
yes
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