Atomistic simulation of band-to-band tunneling in SiGe: Influence of alloy scattering

Metadata only

Autor(in)

Datum

2017

Typ

Conference Paper

ETH Bibliographie

yes

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Publikationsstatus

published

Externe Links

Buchtitel

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Seiten / Artikelnummer

173 - 176

Verlag

IEEE

Konferenz

International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2017), Kamakura, Japan, September 7-9, 2017

Thema

SiGe; random alloy; band-to-band tunneling; quantum transport; non-equilibrium Green’s function (NEGF); tight-binding; valence force field (VFF)

Organisationseinheit

03925 - Luisier, Mathieu / Luisier, Mathieu

Mehr

ETH Bibliographie

yes

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Research Collection