Defects in Silicon induced by high temperature treatment and their influence on MOS-devices
dc.contributor.author
Dammann, Michael
dc.contributor.author
Baltes, Henry
dc.contributor.supervisor
Baltes, Heinrich P.
dc.contributor.supervisor
Känel, Hans <<von>>
dc.date.accessioned
2017-06-13T01:30:27Z
dc.date.available
2017-06-13T01:30:27Z
dc.date.issued
1994
dc.identifier.isbn
3-907574-03-6
dc.identifier.uri
http://hdl.handle.net/20.500.11850/141721
dc.identifier.doi
10.3929/ethz-a-000961970
dc.format
application/pdf
dc.language.iso
en
dc.publisher
ETH Zürich
dc.rights.uri
http://rightsstatements.org/page/InC-NC/1.0/
dc.subject
METAL OXIDE SEMICONDUCTOR-TRANSISTOREN, MOS (ELEKTRONIK)
dc.subject
DEFEKTE UND FEHLORDNUNG (KRISTALLOGRAPHIE)
dc.subject
VORGÄNGE BEI HOHEN TEMPERATUREN, ERZEUGUNG VON HOHEN TEMPERATUREN (WÄRMELEHRE)
dc.subject
METAL OXIDE SEMICONDUCTOR TRANSISTORS, MOS (ELECTRONICS)
dc.subject
DEFECTS AND IRREGULARITIES (CRYSTALLOGRAPHY)
dc.subject
HIGH-TEMPERATURE PRODUCTION (THERMOPHYSICS)
dc.title
Defects in Silicon induced by high temperature treatment and their influence on MOS-devices
dc.title.alternative
Defects in silicon
dc.type
Doctoral Thesis
dc.rights.license
In Copyright - Non-Commercial Use Permitted
ethz.size
II, 95 S.
ethz.code.ddc
DDC - DDC::6 - Technology, medicine and applied sciences::621.3 - Electric engineering
ethz.notes
Rückentitel: Defects in silicon. Diss. Techn. Wiss. ETH Zürich, Nr. 10694, 1994. Ref.: H. Baltes ; Korref.: H. Von Känel.
ethz.identifier.diss
10694
ethz.identifier.nebis
000961970
ethz.publication.place
Zürich
ethz.publication.status
published
ethz.date.deposited
2017-06-13T01:31:14Z
ethz.source
ECOL
ethz.identifier.importid
imp593669f2e73f672613
ethz.ecolpid
eth:39488
ethz.eth
yes
ethz.availability
Closed access
ethz.rosetta.installDate
2017-07-13T01:04:51Z
ethz.rosetta.lastUpdated
2020-02-14T22:57:57Z
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true
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Doctoral Thesis [30011]